© Research Grants are supported by the Taiwan Ministry of Science of Technology (MOST) and our collaborators. This website was built in Apr. 2019. Copyright 2019 LIN Research Group, National Chung Hsing University (NCHU), Taichung 402, Taiwan.

Publications

2019
  1. X. Yu*, Y. Li, S. Li, F. Balestra, G. Ghibaudo, W. Li, Y. F. Lin, H. Sun*, J. Wan, X. Wang, Y. Guo*, Y. Shi, and Y. Y. Noh*; “Precise Extraction of Charge Carrier Mobility for Organic Transistors”, Adv. Funct. Mater. 10.1002/adfm.201904508.

  2. T. H. Tsai, F. S. Yang, P. H. Ho, Z. Y. Liang, C. H. Lien, C. H. Ho, Y. F. Lin, and P. W. Chiu*; “High-Mobility InSe Transistors: The Nature of Charge Transport”, ACS Appl. Mater. Interfaces 11, 35969.

  3. S. H. Yang, K. C. Lee, M. Y. Tsai, Y. M. Chang, C. Y. Lin, F. S. Yang, K. Watanabe, T. Taniguchi, C. H. Lien, C. H. Ho, M. Li*, Y. F. Lin*, and Y. C. Lia*; "Multifunctional Full-visible-spectrum Optoelectronics based on a van der Waals Heterostructure", Nano Energy 66, 104107

  4. C. Y. Lin, J. F. Chen, Y. M. Chang, S. H. Yang, K. C. Lee, W. W. Wu*, W. B. Jian, and Y. F. Lin*; A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications”, small 15, 1900865.

  5. Forest S. S. Chien*, R. A. N. Khasanah, P. T. Lin, Y. F. Lin, and Y. W. Suen*; “Impedance Elements of Significant Junctions in InGaN Light Emitting Diodes Studied by Electric Modulus Spectroscopy”, IEEE Trans. Electron Devises 66, 3393

  6. K. C. Lee, S. H. Yang, Y. S. Sung, Y. M. Chang, C. Y. Lin, F. S. Yang, M. Li, K. Watanabe, T. Taniguchi, C. H. Ho*, C. H. Lien*, and Y. F. Lin*; “Analog Circuit Applications Based on all-2D Ambipolar ReSe2 Field-Effect Transistors”, Adv. Funct. Mater. 31, 1809011

  7. M. Li, F. S. Yang, Y. C. Hsiao, C. Y. Lin, H. M. Wu, S. H. Yang, H. R. Li, C. H. Lien, C. H. Ho, H. J. Liu, W. Li*, Y. F. Lin*, and Y. C. Lai*; “Low-Voltage Operational, Low-Power Consuming and High Sensitive Tactile Switch based on 2D Layered InSe Tribotronics”, Adv. Funct. Mater. 29, 1809119 

  8. S. H. Yang, Y. T. Yao, Y. Xu, C. Y. Lin, Y. M. Chang, Y. W. Suen, H. Sun, C. H. Lien*, W. Li,* and Y. F. Lin*; “Atomically Thin van der Waals Tunnel Field-Effect Transistors and Its Potential for Applications”, Nanotechnology 30, 105201

2018
  1. M. K. Li, T. P. Chen, Y. F. Lin*, C. M. Raghavan, W. L. Chen, S. H. Yang, R. Sankar, C. W. Luo, Y. M. Chang, and C. W. Chen*; “Intrinsic Carrier Transport of Phase-Pure Homologous 2D Organolead Halide Hybrid Perovskite Single Crystals”, small 14, 1803763 

  2. C. H. Chen, W. Li, Y. M. Chang, C. Y. Lin, S. H. Yang, Y. Xu, and Y. F. Lin*; “Negative Differential Resistance Devices Achieved by Band Structure Engineering in Silicene under Periodic Potentials”, Phys. Rev. Applied 10, 044047 

  3. M. Li, C. Y. Lin, S. H. Yang, Y. M. Chang, J. K. Chang, F. S. Yang, C. Zhong, W. B. Jian, C. H. Lien, C. H. Ho, H. J. Liu, R. Huang, W. Li*, Y. F. Lin*, and J. Chu; “High Mobilities in Layered InSe Transistors with Indium Encapsulation Induced Surface Charge Doping”, Adv. Mater. 30, 1803690

  4. (Invited comments) S. H. Yang, and Y. F. Lin*; “Atomically thin ICs under the Spotlight”, Nat. Electron. 1, 498

  5. Y. Xu*, H. Sun, A. Liu, H. H. Zhu, W. Li, Y. F. Lin, and Y. Y. Noh*; “Doping: a Key enabler for Organic Transistors”, Adv. Mater. 30, 1801830

  6. Y. M. Chang, S. H. Yang, C. Y. Lin, C. H. Chen, C. H. Lien, W. B. Jian, K. Ueno, Y. W. Suen*, K. Tsukagoshi*, and Y. F. Lin*; “Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping”, Adv. Mater. 30, 1706995

  7. J. J. Lai, D. Jian, Y. F. Lin, M. M. Ku, and W. B. Jian*; “Electron Transport in the Two-dimensional Channel Material-Zinc Oxide Nanoflake”, Physica B 532, 135

2017
  1. H. L. Tang, M. H. Chiu, C. C. Tseng, S. H. Yang, K. J. Hou, S. Y. Wei, J. K. Huang, Y. F. Lin, C. H. Lien*, and L. J. Li*; “Multilayer Graphene-WSe2 Heterostructures for WSe2 Transistors”, ACS Nano 11, 12817

  2. Y. Xu*, H. Sun, W. Li, Y. F. Lin*, F. Balestra, G. Ghibaudo, and Y. Y. Noh*; “Exploring the Charge Transport in Conjugated Polymers”, Adv. Mater. 29, 1702729

  3. Y. F. Lin, C. H. Chang, T. C. Hung, Z. Liu, J. Fang, and W. B. Jian*; “Nanocontact Disorder in InP Nanowire Devices for the Enhancement of Visible Light and Oxygen Gas Sensitivities”, Procedia IUTAM, 21, 33-39

  4. Y. M. Chang, M. L. Lin, T. Y. Lai, C. H. Chen, H. Y. Lee, C. M. Lin, Y. C. Sermon Wu, Y. F. Lin*, and J. Y. Juang*; “Broadband Omnidirectional Light Trapping in Gold-Decorated ZnO Nanopillars Array”, ACS Appl. Mater. Interfaces 9, 11985

  5. D. Jian, J. J. Lai, Y. F. Lin*, J. Zhai, I. L Li, F. Tian, S. Wang, P. Hua, M. M. Ku, W. B. Jian*, S. Ruan*, and Z. Tang; “Electron Hopping Transport in 2D Zinc Oxide Nanoflakes”, 2D Mater. 4, 025028

2016
  1. C. K. Hsu, C. Y. Lin, W. Li*, H. Sun, Y. Xu*, Z. Hu, Y. M. Chang, Y. W. Suen, and Y. F. Lin*; “The Impact of Electrical Contacts and Contact-Induced Ultralow Noise Amplitudes in Layered Transistors”, 2D Mater. 3, 045015

  2. (Invited paper) Y. M. Chang*, C. Y. Lin, Y. F. Lin*, and K. Tsukagoshi*; “Two-dimensional MoTe2 Materials: From Synthesis, Identification, and Charge Transport to Electronic Applications”, Jpn. J. Appl. Phys. 55, 1102A1

  3. Y. Xu*, H. Sun, E. Y. Shin, Y. F. Lin, W. Li*, and Y. Y. Noh*; “Planar-Processed Polymer Transistor”, Adv. Mater. 28, 8531

2015
  1. Y. F. Lin*, Y. Xu, C. Y. Lin, Y. W. Suen, M. Yamamoto, S. Nakaharai, K. Ueno, and K. Tsukagoshi*; “Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors”, Adv. Mater. 27, 6612

  2. Y. F. Lin*, C. H. Chang, T. C. Hung, W. B. Jian*, K. Tsukagoshi, Y. H. Wu, L. Chang, Z. Liu and J. Fang; “Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities”, Sci. Rep. 5, 13035

  3. S. Nakaharai*, M. Yamamoto, K. Ueno, Y. F. Lin, S. L. Li, and K. Tsukagoshi*; “Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors”, ACS Nano 9, 5976

2014
  1. S. L. Li*, K. Komatsu, S. Nakaharai, Y. F. Lin, M. Yamamoto, X. Duan, and K. Tsukagoshi*; “Thickness scaling effect on  interfacial barrier and electrical contact to two-dimensional MoS2 layers”, ACS Nano 8, 12836

  2. H. Sun, Q. Wang, Y. Li*, Y. F. Lin, Y. Wang, Y. Yin, Y. Xu, C. Liu, K. Tsukagoshi*;  “Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation”, Sci. Rep. 4, 7227

  3. M. Yamamoto*, S. T. Wang, M. Ni, Y. F. Lin, S. L. Li, S. Aikawa, W. B. Jian, K. Ueno, K. Wakabayashi, and K. Tsukagoshi*; “Strong enhancement of Raman scattering from a bulk-inactive vibrational mode in few-layer MoTe2”, ACS Nano 8, 3895

  4. Y. F. Lin*, Y. Xu, S. T. Wang, S. L. Li, M. Yamamoto, A. A. Ferreira, W. Li, H. Sun, W. B. Jian, S. Nakaharai, K. Ueno, and K. Tsukagoshi*; “Ambipolar MoTe2 transistor and their applications in logic circuits”, Adv. Mater. 26, 3263

  5. Y. F. Lin*, W. Li, S. L. Li, Y. Xu, K. Komatsu, A. A. Ferreira, and K. Tsukagoshi*; “Barrier inhomogeneities at vertically stacked graphene-based heterostructures”, Nanoscale 6, 795

2013
  1. Y. Xu*, C. Liu, W. Scheideler, S. L. Li, W. Li, Y. F. Lin, F. Balestra, G. Ghibaudo, and K. Tsukagoshi*; “Understanding pentacene growth dynamics by low-frequency noise measurement”, IEEE Electron Device Lett.34, 1298

  2. S. C. Chiu, J. S. Jhang, Y. F. Lin, S. Y. Hsu, J. Fang, and W. B. Jian*; “Nanocrystal shape and nanojunction effects on electron transport in nanocrystal-assembled bulks”, Nanoscale 5, 8555

  3. S. L. Li*, K. Wakabayashi*, Y. Xu, S. Nakaharai, K. Komatsu, W. W. Li, Y. F. Lin, A. A. Ferreira, and K. Tsukagoshi*; “Coulomb impurity induced thickness-dependent carrier scattering in ultrathin field-effect transistors”, Nano Lett.13, 3545

  4. W. Li*, S. L. Li, K. Komatsu, A. A. Ferreira, Y. F. Lin, Y. Xu, M. Osada, T. Sasaki, and K. Tsukagoshi*; “Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric”, Appl. Phys. Lett. 103, 023113

  5. K. J. Sankaran, Y. F. Lin, W. B. Jian, K. Panda, B. Sundaravel, C. L. Dong, N. H. Tai*, and I. N. Lin*; “Structural and electrical properties of n-type conducting diamond nanowires”, ACS Appl. Mater. Interfaces 5, 1294

  6. Y. F. Lin*, S. T. Wang, C. C. Pao, Y. C. Li, C. C. Lai, C. K. Lin, S. Y. Hsu, and W. B. Jian*; “Probing into the metal-graphene interface by electron transport measurements", Appl. Phys. Lett. 102, 033107

Before 2013
  1. S. T. Wang, Y. F. Lin, Y. C. Li, P. C. Yeh, S. J. Tang, B. Rosenstein, T. H. Hsu, X. Zhou, Z. Liu, M. T. Lin, and W. B. Jian*; ‘’Direct probing of density of states of reduced graphene oxides in a wide voltage range by tunneling junction”, Appl. Phys. Lett. 101, 183110

  2. Y. F. Lin*, S. C. Chiu, S. T. Wang, S. K. Fu, C. H. Chen, W. J. Xie, S. H. Yang, C. S. Hsu, J. F. Chen, Zhaoping Liu, W. B. Jian*; “
    Dielectrophoretic Placement of Nanocrystals, Nanofibers, and Graphene into Nanogap for Electrical Characterizations”, Electrophoresis 33, 2475

  3. Y. F. Lin, C. H. Chen, W. J. Xie, S. H. Yang, C. S. Hsu, M. T. Lin, W. B. Jian*; ’’Nano approach investigation of conduction mechanism in polyaniline nanofibers’’, ACS Nano 5, 1541

  4. Y. F. Lin, T. H. Chen, C. H. Chang, Y. W. Chang, Y. C. Chiu. H. C. Hung, J. J. Kai, Z. Liu, J. Fang, W. B. Jian*; ’’Electron transport in high-resistance semiconductor nanowires through two-probe measurements’’, Phys. Chem. Chem. Phys. 12, 10928

  5. Y. F. Lin, Z. Y. Wu, K. C. Lin, C. C. Chen, W. B. Jian*, F. R. Chen, J. J. Kai; “Nanocontact resistance and structural disorder induced resistivity variation in metallic metal-oxide nanowires”, Nanotechnology 20, 455401

  6. Z. Liu, K. Sun, W. B. Jian, D. Xu, Y. F. Lin, J. Fang*; “Soluble InP and GaP nanowires: self-seeded, solution-liquid-solid synthesis and electronic properties”, Chem. Eur. J. 15, 4546

  7. Z. Y. Wu, I. J. Chen, Y. F. Lin, S. P. Chiu, F. R. Chen, J. J. Kai, J. J. Lin and W. B. Jian*; “Cross-sectional shape modulation of physical properties in ZnO and Zn1−xCoxO nanowires”, New J. Phys. 10, 033017

  8. Y. F. Lin and W. B. Jian*; “The impact of nanocontact on nanowire based nanoelectronics”, Nano Lett. 8, 3146 (2008)

  9. Y. F. Lin, W. B. Jian*, C. P. Wang, Y. W. Suen, Z. Y. Wu, F. R. Chen, J. J. Kai and J. J. Lin; “Contact to ZnO and intrinsic resistances of individual ZnO nanowires with a circular cross section”, Appl. Phys. Lett. 90, 223117